STB30NF20L STMicroelectronics

STB30NF20L Automotive-grade N-channel 200 V, 0.066 typ., 30 A, STripFET Power MOSFET in DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STB30NF20L 200 V 0.075 30 A 150 W 2 AEC-Q101 qualified 3 1 Gate charge minimized 100% avalanche tested Excellent FoM (figure of merit) D PAK Very low intrinsic capacitance Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB) This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics unique single feature size strip-based process, which decreases the critical alignment steps to offer exceptional G(1) manufacturing reproducibility. The result is a transistor with extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. S(3) AM01475v1 noZen Table 1: Device summary Order code Marking Package Packaging STB30NF20L 30NF20L DPAK Tape and reel March 2017 DocID022753 Rev 3 1/15 www.st.com This is information on a product in full production. Contents STB30NF20L Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information .............................................................. 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID022753 Rev 3