STD7N52K3, STP7N52K3 Datasheet N-channel 525 V, 0.72 typ., 6 A, MDmesh K3 Power MOSFETs in DPAK and TO-220 packages Features Order codes V R max. I P DS DS(on) D TOT TAB TAB STD7N52K3 525 V 0.85 6 A 90 W 2 3 STP7N52K3 1 3 2 100% avalanche tested DPAK TO-220 1 Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recovery characteristics D(2, TAB) Zener-protected Applications G(1) Switching applications Description S(3) AM01475V1 These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Product status links STD7N52K3 STP7N52K3 Product summary STD7N52K3 Order code STD7N52K3 Marking 7N52K3 Package DPAK Packing Tape and reel STP7N52K3 Order code STP7N52K3 Marking 7N52K3 Package TO-220 Packing Tube DS5889 - Rev 6 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD7N52K3, STP7N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 6 A C I D Drain current (continuous) at T = 100 C 3.8 A C (1) I Drain current (pulsed) 24 A DM P Total dissipation at T = 25 C 90 W TOT C (2) I Avalanche current, repetitive or non-repetitive 3 A AR (3) E Single pulse avalanche energy 100 mJ AS ESD Gate-source human body model (C = 100 pF, R = 1.5 k) 2.5 kV (4) dv/dt Peak diode recovery voltage slope 12 V/ns T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. Pulse width is limited by T . Jmax 3. Starting T = 25 C, I = I , V = 50 V J D AR DD 4. I 6 A, di/dt 400 A/s, V < V , V = 80% V SD DS(peak) (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 R Thermal resistance junction-case 1.39 C/W thj-case (1) R Thermal resistance junction-pcb 50 C/W thj-pcb R Thermal resistance junction-ambient 62.5 C/W thj-amb 1. When mounted on an 1-inch FR-4, 2oz Cu board. DS5889 - Rev 6 page 2/21