Product Information

STBR3012WY

STBR3012WY electronic component of STMicroelectronics

Datasheet
Rectifiers Automotive 1200 V, 30 A Bridge Rectifier Diode

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.3721 ea
Line Total: USD 4.37

113 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
113 - Warehouse 1


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

STBR3012WY
STMicroelectronics

1 : USD 4.3721
10 : USD 3.8157
30 : USD 3.4842
100 : USD 3.1508
500 : USD 2.995
1000 : USD 2.9258

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Series
Qualification
Product
Brand
Operating Temperature Range
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
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STBR3012-Y Datasheet Automotive high voltage rectifier for bridge applications Features A1 K AEC-Q101 qualified K Ultra low conduction losses Ultra-low reverse losses A High junction temperature capability (+175 C) A A NC V guaranteed from -40 to +175 C RRM K DPAK HV DPAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top DO-247 coating) PPAP capable ECOPACK 2 compliant (DO-247) Applications On board charger Bridge Description The high quality design of this diode has produced a device with consistently reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Product status link Thanks to its ultra-low conduction losses, the STBR3012-Y is especially suitable for STBR3012-Y use as input bridge diode in battery chargers. Product summary Symbol Value I 30 A F(AV) V 1200 V RRM T +175 C j V (typ.) 0.95 V F DS11897 - Rev 2 - November 2018 www.st.com For further information contact your local STMicroelectronics sales office.STBR3012-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Non-repetitive surge reverse voltage 1600 V RSM V T = -40 C to +175 C Repetitive peak reverse voltage 1200 V RRM j I Forward rms current 45 A F(RMS) I Average forward current T = 155 C, = 0.5 square wave 30 A F(AV) C I Surge non repetitive forward current t = 10 ms sinusoidal 300 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature -40 to +175 C j Table 2. Thermal parameters Symbol Parameter Typ. value Unit R Junction to case 0.45 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 2 j I V = V Reverse leakage current A R R RRM T = 150 C - 10 100 j T = 25 C - 1.05 1.3 j V I = 30 A Forward voltage drop V F F T = 150 C - 0.95 1.2 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.96 x I + 0.008 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode DS11897 - Rev 2 page 2/12

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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