STBV45-AP STMicroelectronics

STBV45 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Compact fluorescent lamps (CFLs) TO-92 TO-92AP SMPS for battery charger Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV45G and STBV45G-AP are supplied using halogen-free molding compound. Table 1. Device summary Order codes Marking Package Packaging STBV45 BV45 TO-92 Bulk STBV45G BV45G TO-92 Bulk STBV45-AP BV45 TO-92AP Ammopack STBV45G-AP BV45G TO-92AP Ammopack October 2008 Rev 6 1/10 www.st.com 10 Obsolete Product(s) - Obsolete Product(s)Electrical ratings STBV45 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 0.75 A C I Collector peak current (t < 5 ms) 1.5 A CM P I Base current 0.4 A B I Base peak current (t < 5 ms) 0.75 A BM P P Total dissipation at T = 25 C 0.95 W TOT c T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 131.6 C/W thj-case 2/10 Obsolete Product(s) - Obsolete Product(s)