STBV32G-AP STMicroelectronics

STBV32 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications Compact fluorescent lamps (CFLS) TO-92 TO-92AP SMPS for battery charger Description Figure 1. Internal schematic diagram The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV32G and STBV32G-AP are supplied using halogen-free molding compound. Table 1. Device summary Order codes Marking Package Packaging STBV32 BV32 TO-92 Bulk STBV32G BV32G TO-92 Bulk STBV32-AP BV32 TO-92AP Ammopack STBV32G-AP BV32G TO-92AP Ammopack July 2008 Rev 8 1/11 www.st.com 11Electrical ratings STBV32 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Collector-base voltage (I = 0, I = 0.5A, t < 10 ms) V V EBO C B P (BR)EBO Collector current I 1.5 A C (f 100 Hz, duty-cycle 50%, T = 25 C) C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 1.5 W TOT c T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 83.3 C/W thj-case 2/11