STBR6012W STMicroelectronics

STBR6012 High voltage rectifier for bridge applications Datasheet - production data Description A K The high quality design of this diode results in a device with consistently reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Thanks to its ultra-low conduction losses, this diode is especially suitable for use as input A bridge diode. K Table 1: Device summary Symbol Value DO-247 IF(AV) 60 A VRRM 1200 V Features VF (typ.) 0.95 V Ultra-low conduction losses T (max.) 175 C j Ultra-low reverse losses High junction temperature capability ECOPACK 2 compliant component November 2016 DocID029967 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics STBR6012 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRSM Non-repetitive surge reverse voltage 1500 V V Repetitive peak reverse voltage 1200 V RRM IF(RMS) Forward rms current 90 A T = 135 C, C IF(AV) Average forward current 60 A = 0.5 square wave IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 500 A T Storage temperature range -65 to +175 C stg Tj Maximum operating junction temperature 175 C Table 3: Thermal parameters Symbol Parameter Max. value Unit R Junction to case 0.45 C/W th(j-c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 5 j (1) IR Reverse leakage current VR = VRRM A Tj = 150 C - 25 250 T = 25 C - 1.05 1.3 j (2) VF Forward voltage drop IF = 60 A V Tj = 150 C - 0.95 1.2 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.96 x IF(AV) + 0.004 x IF (RMS) 2/8 DocID029967 Rev 1