STBV42G STMicroelectronics

STBV42 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger TO-92 TO-92AP Description The device is manufactured using high voltage multi epitaxial planar technology for high switching Figure 1. Internal schematic diagram speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STBV42G and STBV42G-AP are supplied using halogen-free molding compound. Table 1. Device summary Order codes Marking Package Packaging STBV42 BV42 TO-92 Bulk STBV42-AP BV42 TO-92AP Ammopack STBV42G BV42G TO-92 Bulk STBV42G-AP BV42G TO-92AP Ammopack July 2009 Doc ID 7232 Rev 6 1/10 www.st.com 10Electrical ratings STBV42 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Emitter-base voltage (I = 0) 9 V EBO C I Collector current 1 A C I Collector peak current (t < 5 ms) 2 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1 A BM P P Total dissipation at T = 25 C 1 W TOT c T Storage temperature -65 to 150 stg C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 125 C/W thJC 2/10 Doc ID 7232 Rev 6