STD127DT4 STMicroelectronics

STD127DT4 High voltage fast-switching NPN power transistor Datasheet - production data Features NPN transistor High voltage capability TAB Low spread of dynamic parameters 3 Minimum lot-to-lot spread for reliable operation 1 Very high switching speed Integrated anti-parallel collector - emitter diode DPAK Applications Electronic ballast for fluorescent lighting Fly back and forward single transistor low power converters Figure 1. Internal schematic diagram Description C (2 or tab) This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar B (1) edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. E (3) Table 1. Device summary Part number Marking Package Packaging STD127DT4 D127D DPAK Tape and reel November 2013 DocID025553 Rev 1 1/14 This is information on a product in full production. www.st.comContents STD127DT4 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 5 3 Test circuits 7 4 Package mechanical data . 8 5 Packing mechanical data 11 6 Revision history . 13 2/14 DocID025553 Rev 1