STD5N20 N-CHANNEL 200V - 0.6 - 5A DPAK MESH OVERLAY MOSFET TYPE V R I DSS DS(on) D STD5N20 200 V < 0.8 5 A TYPICAL R (on) = 0.6 DS EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 ADD SUFFIX T4 FOR OREDERING IN TAPE & 1 REEL DPAK TO-252 DESCRIPTION Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an ad- INTERNAL SCHEMATIC DIAGRAM vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Companys proprietary edge termina- tion structure, makes it suitable in coverters for lighting applications. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 200 V DS GS V Drain-gate Voltage (R = 20 k) 200 V DGR GS V Gate- source Voltage 20 V GS I Drain Current (continuous) at T = 25C 5A D C I Drain Current (continuous) at T = 100C 3.5 A D C I (l) Drain Current (pulsed) 20 A DM P Total Dissipation at T = 25C 45 W TOT C Derating Factor 0.36 W/C dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns T Storage Temperature 65 to 150 C stg T Max. Operating Junction Temperature 150 C j (1)I 5A, di/dt 300A/s, V V , T T SD DD (BR)DSS j JMAX. ()Pulse width limited by safe operating area (**) Limited only by Maximum Temperature Allowed December 2000 1/8 Obsolete Product(s) - Obsolete Product(s)STD5N20 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.77 C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 C/W Rthc-sink Thermal Resistance Case-sink Typ 1.5 C/W T Maximum Lead Temperature For Soldering Purpose 275 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit Avalanche Current, Repetitive or Not-Repetitive I 5A AR (pulse width limited by T max) j Single Pulse Avalanche Energy E 130 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD ELECTRICAL CHARACTERISTICS (T = 25 C UNLESS OTHERWISE SPECIFIED) CASE OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V Drain-source (BR)DSS I = 250 A, V = 0 200 V D GS Breakdown Voltage I V = Max Rating 1A DSS DS Zero Gate Voltage Drain Current (V = 0) GS V = Max Rating, T = 125 C 50 A DS C I Gate-body Leakage GSS V = 20V 100 nA GS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V Gate Threshold Voltage V = V , I = 250A 23 4 V GS(th) DS GS D R Static Drain-source On V = 10V, I = 2.5 A DS(on) GS D 0.7 0.8 Resistance I On State Drain Current V > I x R D(on) DS D(on) DS(on)max, 5A V =10V GS DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (1) Forward Transconductance V > I x R fs DS D(on) DS(on)max, 1.5 4 S I = 2.5A D C Input Capacitance V = 25V, f = 1 MHz, V = 0 350 pF iss DS GS C Output Capacitance 70 pF oss Reverse Transfer C 35 pF rss Capacitance 2/8 Obsolete Product(s) - Obsolete Product(s)