STF16N90K5 STMicroelectronics

STF16N90K5 Datasheet N-channel 900 V, 280 m typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package Features V R max. I Order code DS DS(on) D STF16N90K5 900 V 330 m 15 A Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 2 1 Ultra-low gate charge 100% avalanche tested TO-220FP Zener-protected D(2) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a S(3) AM15572v1 no tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STF16N90K5 Product summary Order code STF16N90K5 Marking 16N90K5 Package TO-220FP Packing Tube DS13052 - Rev 1 - August 2019 www.st.com For further information contact your local STMicroelectronics sales office.STF16N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 15 A D C I Drain current (continuous) at T = 100 C 9 A D C (1) I Drain current (pulsed) 60 A DM P Total power dissipation at T = 25 C 30 W TOT C Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s T = 25 C) C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 15 A, di/dt 100 A/s V (peak) V , V = 450 V. SD DS (BR)DSS DD 3. V 720 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 4.1 C/W thj-case R Thermal resistance junction-amb 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T max) 5 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 380 mJ AS J D AR DD DS13052 - Rev 1 page 2/12