Product Information

STF16N90K5

STF16N90K5 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 900 V 280 mOhm typ. 15 A MDmesh K5 Power MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2912 ea
Line Total: USD 2.29

3 - Global Stock
Ships to you between
Thu. 09 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1

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STF16N90K5
STMicroelectronics

1 : USD 2.2912

8 - WHS 2


Ships to you between
Thu. 16 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

STF16N90K5
STMicroelectronics

1 : USD 7.9352
10 : USD 6.9972
30 : USD 6.424
100 : USD 5.6532

8 - WHS 3


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1

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STF16N90K5
STMicroelectronics

1 : USD 8.346
3 : USD 6.201
8 : USD 5.863

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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STF16N90K5 Datasheet N-channel 900 V, 280 m typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package Features V R max. I Order code DS DS(on) D STF16N90K5 900 V 330 m 15 A Industrys lowest R x area DS(on) 3 Industrys best FoM (figure of merit) 2 1 Ultra-low gate charge 100% avalanche tested TO-220FP Zener-protected D(2) Applications Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a S(3) AM15572v1 no tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STF16N90K5 Product summary Order code STF16N90K5 Marking 16N90K5 Package TO-220FP Packing Tube DS13052 - Rev 1 - August 2019 www.st.com For further information contact your local STMicroelectronics sales office.STF16N90K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 15 A D C I Drain current (continuous) at T = 100 C 9 A D C (1) I Drain current (pulsed) 60 A DM P Total power dissipation at T = 25 C 30 W TOT C Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s T = 25 C) C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 15 A, di/dt 100 A/s V (peak) V , V = 450 V. SD DS (BR)DSS DD 3. V 720 V. DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 4.1 C/W thj-case R Thermal resistance junction-amb 62.5 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T max) 5 A AR J E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 380 mJ AS J D AR DD DS13052 - Rev 1 page 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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