Product Information

STFI15N65M5

STFI15N65M5 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 650 V 0.308 Ohm 11 A MDmesh(TM) M5
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

29: USD 1.362 ea
Line Total: USD 39.5

48 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 29  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
48 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 29
Multiples : 1

Stock Image

STFI15N65M5
STMicroelectronics

29 : USD 1.4202
50 : USD 1.3552

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
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Additional Infomation About Product

STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET 2 in TO-220FP, I PAKFP and TO-220 packages Datasheet production data Features V R DS DS(on) Order codes I D T max Jmax 3 2 1 STF15N65M5 TO-220FP STFI15N65M5 710 V < 0.34 11 A TAB STP15N65M5 Worldwide best R * area DS(on) 3 1 Higher V rating and high dv/dt capability 2 DSS 2 3 1 2 I PAKFP Excellent switching performance TO-220 100% avalanche tested Figure 1. Internal schematic diagram Applications 4 Switching applications Description These devices are N-channel MDmesh V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- 3 - V based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging STF15N65M5 TO-220FP 2 STFI15N65M5 15N65M5 I PAKFP Tube STP15N65M5 TO-220 November 2012 Doc ID 022863 Rev 2 1/17 This is information on a product in full production. www.st.com 17Contents STF15N65M5, STFI15N65M5, STP15N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 16 2/17 Doc ID 022863 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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