STFI20NM65N STMicroelectronics

STFI20NM65N N-channel 650 V, 15 A, 0.250 typ., MDmesh II Power MOSFET in a IPAKFP package Datasheet - production data Features Order code V T R max. I DSS jmax DS(on) D STFI20NM65N 710 V 0.270 15 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 2 Applications I PAKFP (TO-281) Switching applications Description Figure 1. Internal schematic diagram This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high * efficiency converters. 6 0 Y Table 1. Device summary Order code Marking Packages Packaging 2 STFI20NM65N 20NM65N I PAKFP (TO-281) Tube December 2013 DocID025737 Rev 1 1/12 This is information on a product in full production. www.st.comContents STFI20NM65N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID025737 Rev 1