Product Information

STFW24N60M2

STFW24N60M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.4403 ea
Line Total: USD 8.44

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 600
Multiples : 600

Stock Image

STFW24N60M2
STMicroelectronics

600 : USD 2.022

0 - WHS 2


Ships to you between Tue. 21 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STFW24N60M2
STMicroelectronics

1 : USD 8.4403
10 : USD 3.0447
25 : USD 2.879
100 : USD 2.4958
600 : USD 2.1126
1200 : USD 1.8538

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STFW24N60M2 Datasheet N-channel 600 V, 168 m typ., 18 A MDmesh M2 Power MOSFET in TO-3PF package Features V T R max. I Order code DS Jmax DS(on) D STFW24N60M2 650 V 190 m 18 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested Zener-protected 3 2 1 Applications TO-3PF Switching applications LCC converters D(2) Resonant converters Description G(1) This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. S(3) AM15572v1 no tab Product status link STFW24N60M2 Product summary Order code STFW24N60M2 Marking 24N60M2 Package TO-3PF Packing Tube DS13264 - Rev 1 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.STFW24N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 18 A C (1) I D Drain current (continuous) at T = 100 C 12 A C (2) I Drain current (pulsed) 72 A DM P Total power dissipation at T = 25 C 48 W TOT C (3) dv/dt Peak diode recovery voltage slope 15 V/ns (4) MOSFET dv/dt ruggedness 50 V/ns dv/dt Insulation withstand voltage (RMS) from all three leads to external heat V 3.5 kV ISO sink (t = 1 s T = 25 C) C T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I 18 A, di/dt 400 A/s V < V , V = 400 V SD DS(peak) (BR)DSS DD 4. V 480 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.6 C/W thj-case R Thermal resistance junction-ambient 50 C/W thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit Avalanche current, repetitive or not repetitive I 3.5 A AR (pulse width limited by T ) jmax E Single pulse avalanche energy (starting T =25 C, I = I , V =50 V) 180 mJ AS j D AR DD DS13264 - Rev 1 page 2/12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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