Product Information

STGB30H60DLLFBAG

STGB30H60DLLFBAG electronic component of STMicroelectronics

Datasheet
IGBT Transistors Automotive-grade trench gate field-stop IGBT HB series 600 V 30 A high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.3723 ea
Line Total: USD 9.37

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STGB30H60DLLFBAG
STMicroelectronics

1 : USD 9.3723
10 : USD 3.3761
25 : USD 3.1897

Read More Specifications

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Qualification
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

STGB30H60DLLFBAG Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features AEC-Q101 qualified TAB Maximum junction temperature: T = 175 C J Logic level gate drive High speed switching series 2 Minimized tail current 3 V = 1.7 V (typ.) I = 30 A CE(sat) C 1 Low V soft recovery co-packaged diode F Tight parameters distribution D Safer paralleling PAK Low thermal resistance Applications Figure 1: Internal schematic diagram Ignition Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packaging STGB30H60DLLFBAG GB30H60DLLFB DPAK Tape and reel October 2016 DocID029886 Rev 1 1/17 www.st.com This is information on a product in full production. Contents STGB30H60DLLFBAG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 4.1 DPAK package information ............................................................ 11 4.2 DPAK packing information ............................................................. 14 5 Revision history ............................................................................ 16 2/17 DocID029886 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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