Product Information

STGB30H65FB

STGB30H65FB electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT HB series 650 V 30 A high speed in a D2PAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.5351 ea
Line Total: USD 1535.1

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1000
Multiples : 1000

Stock Image

STGB30H65FB
STMicroelectronics

1000 : USD 1.5351
2000 : USD 1.5224
5000 : USD 1.5097
10000 : USD 1.459
25000 : USD 1.4082

Read More Specifications

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

STGB30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed 2 in a D PAK package Datasheet - production data Features Maximum junction temperature: T = 175 C J TAB High speed switching series Minimized tail current VCE(sat) = 1.55 V(typ.) IC = 30 A 2 Safe paralleling 3 Tight parameter distribution 1 Low thermal resistance D PAK Applications Photovoltaic inverters High frequency converters Figure 1: Internal schematic diagram Description This device is an IGBT developed using an C(2, TAB) advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching G(1) loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E(3) G1C2TE3 Table 1: Device summary Order code Marking Package Packing 2 STGB30H65FB GB30H65FB D PAK Tape and reel May 2017 DocID030599 Rev 2 1/17 www.st.com This is information on a product in full production. Contents STGB30H65FB Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 10 4 Package information ..................................................................... 11 2 4.1 D PAK package information ............................................................ 11 4.2 D2PAK packing information ............................................................ 14 5 Revision history ............................................................................ 16 2/17 DocID030599 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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