Product Information

STGF20H60DF

STGF20H60DF electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors 600V 20A High Speed Trench Gate IGBT
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.3236 ea
Line Total: USD 2.32

94 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
94 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

STGF20H60DF
STMicroelectronics

1 : USD 2.3236
10 : USD 2.0092
50 : USD 1.8123
100 : USD 1.6097
500 : USD 1.5194
1000 : USD 1.4802

970 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 17
Multiples : 1

Stock Image

STGF20H60DF
STMicroelectronics

17 : USD 2.3095
50 : USD 1.8659
100 : USD 1.7436
200 : USD 1.7282
500 : USD 1.5099
1000 : USD 1.508

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 Safe paralleling 3 2 2 1 1 Low thermal resistance TO-220 TO-220FP Short-circuit rated Ultrafast soft recovery antiparallel diode TAB Applications 3 1 Motor control DPAK UPS, PFC Figure 1. Internal schematic diagram Description This device is an IGBT developed using an C (2, TAB) advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive G (1) V temperature coefficient and very tight CE(sat) parameter distribution result in easier paralleling operation. E (3) Table 1. Device summary Order codes Marking Packages Packaging STGB20H60DF GB20H60DF DPAK Tape and reel STGF20H60DF GF20H60DF TO-220FP Tube STGP20H60DF GP20H60DF TO-220 Tube June 2013 DocID023740 Rev 4 1/22 This is information on a product in full production. www.st.com 22Contents STGB20H60DF, STGF20H60DF, STGP20H60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 7 3 Test circuits 12 4 Package mechanical data 13 5 Packaging mechanical data 19 6 Revision history . 21 2/22 DocID023740 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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