Product Information

STGF20M65DF2

STGF20M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss
Manufacturer: STMicroelectronics
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1: USD 3.979 ea
Line Total: USD 3.98

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STGF20M65DF2
STMicroelectronics

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STGF20M65DF2
STMicroelectronics

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STGF20M65DF2
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STGF20M65DF2
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STGF20M65DF2
STMicroelectronics

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Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Numofpackaging
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STGF20M65DF2 Datasheet Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT Features High short-circuit withstand time V = 1.55 V (typ.) I = 20 A CE(sat) C Tight parameter distribution Safer paralleling 3 2 Low thermal resistance 1 Soft and very fast recovery antiparallel diode TO-220FP C (2) Applications Motor control UPS PFC G (1) General-purpose inverters Description Sc12850 no tab E (3) This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGF20M65DF2 Product summary Order code STGF20M65DF2 Marking G20M65DF2 Package TO-220FP Packing Tube DS11363 - Rev 4 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STGF20M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE (1) I Continuous collector current at T = 25 C 40 A C C (1) I Continuous collector current at T = 100 C 20 A C C (2) I Pulsed collector current 80 A CP V Gate-emitter voltage 20 V GE (1) I Continuous forward current at T = 25 C 40 A C F (1) I Continuous forward current at T = 100 C 20 A F C (2) I Pulsed forward current 80 A FP Insulation withstand voltage (RMS) from all three leads to external heat sink V 2.5 kV ISO (t = 1 s, T = 25 C) C P Total dissipation at T = 25 C 32.6 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Limited by maximum junction temperature. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 4.6 C/W thJC R Thermal resistance junction-case diode 6.25 C/W thJC R Thermal resistance junction-ambient 62.5 C/W thJA DS11363 - Rev 4 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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