Product Information

STGWA75M65DF2

STGWA75M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors PTD HIGH VOLTAGE

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.5364 ea
Line Total: USD 7.54

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 600
Multiples : 1

Stock Image

STGWA75M65DF2
STMicroelectronics

600 : USD 6.8224
1000 : USD 6.7548
2000 : USD 6.6872
2500 : USD 6.6209
3000 : USD 6.5546
4000 : USD 6.4883
5000 : USD 6.4233
10000 : USD 6.3596
20000 : USD 6.2959
50000 : USD 6.2335

0 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STGWA75M65DF2
STMicroelectronics

1 : USD 6.7994
10 : USD 5.9498
30 : USD 5.7939
100 : USD 5.2436
500 : USD 5.1779
1000 : USD 5.0987

0 - WHS 3


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STGWA75M65DF2
STMicroelectronics

1 : USD 7.5364
10 : USD 4.6554
100 : USD 3.7203
500 : USD 3.3125

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of short-circuit withstand time V = 1.65 V (typ.) I = 75 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C Applications Motor control UPS PFC Figure 1: Internal schematic diagram General purpose inverter C (2) Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance G (1) between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Sc12850 no tab E (3) Table 1: Device summary Order code Marking Package Packing STGW75M65DF2 TO-247 G75M65DF2 Tube STGWA75M65DF2 TO-247 long leads May 2017 DocID028695 Rev 3 1/18 www.st.com This is information on a product in full production. Contents STGW75M65DF2, STGWA75M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 TO-247 package information ........................................................... 13 4.2 TO-247 long leads package information ......................................... 15 5 Revision history ............................................................................ 17 2/18 DocID028695 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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