STGW8M120DF3 STMicroelectronics

STGW8M120DF3, STGWA8M120DF3 Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss Datasheet - production data Features 10 s of short-circuit withstand time V = 1.85 V (typ.) I = 8 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Industrial drives UPS Solar Welding Figure 1: Internal schematic diagram Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGW8M120DF3 TO-247 G8M120DF3 Tube STGWA8M120DF3 TO-247 long leads October 2017 DocID029337 Rev 3 1/17 www.st.com This is information on a product in full production. Contents STGW8M120DF3, STGWA8M120DF3 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 4.1 TO-247 package information ........................................................... 12 4.2 TO-247 long leads package information ......................................... 14 5 Revision history ............................................................................ 16 2/17 DocID029337 Rev 3