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STGW60H65DRF

STGW60H65DRF electronic component of STMicroelectronics
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Part No. STGW60H65DRF
Manufacturer: STMicroelectronics
Category: IGBT Transistors
Description: IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
Datasheet: STGW60H65DRF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

51: USD 2.4625 ea
Line Total: USD 125.59

187 - Global Stock
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 51  Multiples: 1
Pack Size: 1
Availability Price Quantity
187 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 51
Multiples : 1
51 : USD 2.4625

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Power Dissipation
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Series
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Datasheet - production data Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters 3 2 1 Description TO-247 This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise Figure 1. Internal schematic diagram between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very CE(sat) tight parameter distribution result in easier paralleling operation. Features Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time Ultrafast soft recovery antiparallel diode Table 1. Device summary Order code Marking Package Packaging STGW60H65DRF GW60H65DRF TO-247 Tube April 2013 DocID022346 Rev 6 1/13 This is information on a product in full production. www.st.com 13Electrical ratings STGW60H65DRF 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE I Continuous collector current at T = 25 C 120 A C C I Continuous collector current at T = 100 C 60 A C C (1) I Pulsed collector current 240 A CP V Gate-emitter voltage 20 V GE Continuous forward current at T = 25 C 120 C I A F Continuous forward current at T = 100 C 60 C (1) I Pulsed forward current 240 A FP P Total dissipation at T = 25 C 420 W TOT C Short-circuit withstand time at V = 400 V, CC t 6s SC V = 15 V GE T Storage temperature range STG - 55 to 175 C T Operating junction temperature J 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.35 C/W thJC R Thermal resistance junction-case diode 1.38 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA 2/13 DocID022346 Rev 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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