STGW40V60DLF STMicroelectronics

STGW40V60DLF, STGWT40V60DLF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features Designed for soft commutation only TAB Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.8 V (typ.) I = 40 A CE(sat) C Tight parameters distribution 3 2 3 1 Safe paralleling 2 1 Low thermal resistance Low V soft recovery co-packaged diode F TO-247 TO-3P Applications Figure 1. Internal schematic diagram Induction heating Microwave oven C (2 or TAB) Resonant converters Description This device is an IGBT developed using an G (1) advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive V CE(sat) E (3) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW40V60DLF GW40V60DLF TO-247 Tube STGWT40V60DLF GWT40V60DLF TO-3P Tube October 2013 DocID024212 Rev 4 1/17 This is information on a product in full production. www.st.comContents STGW40V60DLF, STGWT40V60DLF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID024212 Rev 4