STGW60H65F STMicroelectronics

STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet production data Features High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3 2 2 Lead free package 1 1 Applications TO-247 TO-3P Photovoltaic inverters Uninterruptible power supply Welding Figure 1. Internal schematic diagram Power factor correction High switching frequency converters Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive V temperature coefficient CE(sat) and a very tight parameter distribution result in an easier paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW60H65F GW60H65F TO-247 Tube STGWT60H65F G60H65F TO-3P Tube January 2013 Doc ID 019012 Rev 5 1/14 This is information on a product in full production. www.st.com 14Electrical ratings STGW60H65F, STGWT60H65F 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE I Continuous collector current at T = 25 C 120 A C C I Continuous collector current at T = 100 C 60 A C C (1) I Pulsed collector current 240 A CP V Gate-emitter voltage 20 V GE P Total dissipation at T = 25 C 360 W TOT C Short-circuit withstand time at V = 400 V, CC t 6s SC V = 15 V GE T Storage temperature range STG - 55 to 150 C T Operating junction temperature J 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.35 C/W thJC R Thermal resistance junction-ambient 50 C/W thJA 2/14 Doc ID 019012 Rev 5