Product Information

STGWA15M120DF3

STGWA15M120DF3 electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.2444 ea
Line Total: USD 4.24

16 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5238 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

STGWA15M120DF3
STMicroelectronics

1 : USD 3.7063
10 : USD 3.4619
25 : USD 3.2786
100 : USD 3.2131
250 : USD 3.2131
600 : USD 3.2131

16 - WHS 2


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGWA15M120DF3
STMicroelectronics

1 : USD 4.2444
10 : USD 3.2211
30 : USD 2.4927
100 : USD 2.2642
600 : USD 2.1599
1200 : USD 2.1121

5238 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3
Multiples : 1

Stock Image

STGWA15M120DF3
STMicroelectronics

3 : USD 3.731
10 : USD 3.4853
25 : USD 3.2539
100 : USD 3.1887

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time V = 1.85 V (typ.) I = 15 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode Applications 2 7 Industrial drives 2 ORQJ OHDGV 7 UPS Solar Welding Figure 1.Internal schematic diagram Description % 7 & RU This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of * inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packaging STGW15M120DF3 G15M120DF3 TO-247 Tube STGWA15M120DF3 G15M120DF3 TO-247 long leads Tube October 2014 DocID026222 Rev 2 1/19 This is information on a product in full production. www.st.com 19Contents STGW15M120DF3, STGWA15M120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 12 4 Package mechanical data 13 4.1 TO-247, STGW15M120DF3 . 14 4.2 TO-247 long leads, STGWA15M120DF3 . 16 5 Revision history . 18 2/19 DocID026222 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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