Product Information

STGWA80H65DFB

STGWA80H65DFB electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.4121 ea
Line Total: USD 5.41

458 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
458 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STGWA80H65DFB
STMicroelectronics

1 : USD 5.4121
10 : USD 4.6926
30 : USD 4.2631
90 : USD 3.8318
510 : USD 3.6303
990 : USD 3.5416

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STGWA80H65DFB Datasheet Trench gate field-stop 650 V, 80 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current Low saturation voltage: V = 1.6 V (typ.) I = 80 A CE(sat) C Tight parameter distribution Safe paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWA80H65DFB Product summary Order code STGWA80H65DFB Marking GWA80H65DFB Package TO-247 long leads Packing Tube DS11933 - Rev 2 - June 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGWA80H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 650 V CES GE (1) Continuous collector current at T = 25 C 120 C I A C Continuous collector current at T = 100 C 80 C (2) I Pulsed collector current (t 1 s, T < 175 C) 300 A p J CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 V (1) Continuous forward current at T = 25 C 120 C I A F Continuous forward current at T = 100 C 80 C (2) I Pulsed forward current (t 1 s, T < 175 C) 300 A p J FP P Total power dissipation at T = 25 C 470 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Current level is limited by bond wires 2. Defined by design, not subject to production test. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.32 thJC R Thermal resistance junction-case diode 0.66 C/W thJC R Thermal resistance junction-ambient 50 thJA DS11933 - Rev 2 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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