STGYA120M65DF2AG STMicroelectronics

STGYA120M65DF2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package Features AEC-Q101 qualified 6 s of short-circuit withstand time V = 1.65 V (typ.) I = 120 A CE(sat) C Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery antiparallel diode C(2, TAB) Maximum junction temperature: T = 175 C J Applications G(1) Motor control UPS PFC General purpose inverters E(3) NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGYA120M65DF2AG Product summary Order code STGYA120M65DF2AG Marking G120M65DF2AG Package Max247 long leads Packing Tube DS11783 - Rev 4 - October 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGYA120M65DF2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 650 V CES GE (1) I Continuous collector current at T = 25 C 160 C C A I Continuous collector current at T = 100 C 120 C C (2) I Pulsed collector current 360 A CP V Gate-emitter voltage 20 V GE (1) I Continuous forward current at T = 25 C 160 C F A I Continuous forward current at T = 100 C 120 F C (2) I Pulsed forward current 360 A FP P Total power dissipation at T = 25 C 625 W TOT C T Storage temperature range -55 to 150 STG C T Operating junction temperature range -55 to 175 J 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.24 thJC R Thermal resistance junction-case diode 0.6 C/W thJC R Thermal resistance junction-ambient 50 thJA DS11783 - Rev 4 page 2/14