STH400N4F6-2, STH400N4F6-6 Automotive-grade N-channel 40 V, 0.85 m typ.,180 A STripFET VI DeepGATE Power MOSFETs Datasheet - production data Features Order codes V R max I DS DS(on) D TAB TAB STH400N4F6-2 40 V 1.15 m 180 A STH400N4F6-6 7 2 3 Designed for automotive applications and 1 1 AEC-Q101 qualified 2 2 H PAK-2 H PAK-6 Low gate charge Very low on-resistance High avalanche ruggedness Applications Figure 1. Internal schematic diagram Switching applications D(TAB) D(TAB) Description These devices are N-channel Power MOSFETs th developed using the 6 generation of STripFET G(1) G(1) DeepGATE technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest R in all packages. DS(on) S(2, 3) S(2, 3, 4, 5, 6, 7) 2 2 H PAK-6 H PAK-2 AM14551V1 Table 1. Device summary Order codes Marking Package Packaging 2 STH400N4F6-2 H PAK-2 400N4F6 Tape and reel 2 STH400N4F6-6 H PAK-6 February 2014 DocID023429 Rev 2 1/18 This is information on a product in full production. www.st.comContents STH400N4F6-2, STH400N4F6-6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Package mechanical data . 8 4 Packaging mechanical data 15 5 Revision history . 17 2/18 DocID023429 Rev 2