STH270N4F3-6 STMicroelectronics

Name: STH270N4F3-6
Brand: STMicroelectronics
SKU: STH270N4F36_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STH270N4F3-6 electronic component of STMicroelectronics

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of STH270N4F3-6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STH270N4F3-6 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	STH270N4F3-6
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Ch 40V 1.40 mOhm STripFET III 180A
Datasheet:	STH270N4F3-6 Datasheet (PDF)

Price (USD)

1: USD 4.65 ea
Line Total: USD 4.65

Availability : 96

Ship by Wed. 06 Aug to Fri. 08 Aug

Qty Unit Price
1 $ 4.65
10 $ 2.921
100 $ 2.211
500 $ 2.035
1000 $ 1.782
2000 $ 1.771

STH270N4F3-6 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 96

Ship by Wed. 06 Aug to Fri. 08 Aug

MOQ : 1
Multiples : 1

Qty Unit Price
1 $ 4.65
10 $ 2.921
100 $ 2.211
500 $ 2.035
1000 $ 1.782
2000 $ 1.771

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

y y

Id - Continuous Drain Current

180 A 180 A

Vds - Drain-Source Breakdown Voltage

40 V 40 V

Rds On - Drain-Source Resistance

1.4 mOhms 1.4 mOhms

Transistor Polarity

n - channel n - channel

Vgs th - Gate-Source Threshold Voltage

4 V 4 V

Pd - Power Dissipation

300 W 300 W

Mounting Style

smd/smt smd/smt

Package / Case

H2PAK H2PAK

Packaging

Reel Reel

Technology

si si

Number of Channels

1 channel 1 channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

110 nC 110 nC

Qualification

aec - q101 aec - q101

Tradename

stripfet stripfet

Series

sth270n4f3 - 6 sth270n4f3 - 6

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

180 A 180 A

Drain-Source Breakdown Voltage

40 V 40 V

Gate-Source Breakdown Voltage

20 V 20 V

Power Dissipation

300 W 300 W

Rds On

1.4 mohms 1.4 mohms

Fall Time

45 ns 45 ns

Gate Charge Qg

110 nC 110 nC

Rise Time

180 ns 180 ns

Factory Pack Quantity :

1000 1000

Configuration

single single

Transistor Type

1 n - channel 1 n - channel

Cnhts

8541210000 8541210000

Hts Code

8541290075 8541290075

Mxhts

85412101 85412101

Product Type

mosfet mosfet

Subcategory

Mosfets Mosfets

Taric

8541210000 8541210000

Notes:- Show Stocked Products With Similar Attributes.

STH270N4F3-6 Alternative Parts

We are delighted to provide the STH270N4F3-6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STH270N4F3-6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STH270N4F3-6 Automotive-grade N-channel 40 V, 1.4 m typ., 180 A 2 STripFET F3 Power MOSFET in H PAK-6 package Datasheet production data Features % Order codes V R max I DS DS(on) D STH270N4F3-6 40 V 1.7 m 180 A Designed for automotive applications and AEC-Q101 qualified Conduction losses reduced 2 H PAK-6 Low profile, very low parasitic inductance, high current package + . 3 Applications Switching applications Figure 1. Internal schematic diagram Description % 7 This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. * 6 *,3 )65 Table 1. Device summary Order code Marking Package Packaging 2 STH270N4F3-6 270N4F3 H PAK-6 Tape and reel May 2015 DocID027909 Rev 1 1/15 This is information on a product in full production. www.st.com 15 7 Contents STH270N4F3-6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 2 4.1 H PAK-6 package information 9 5 Packing information 12 6 Revision history . 14 2/15 DocID027909 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

C-Max may also be referenced as

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ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
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Qty	Unit Price
1	$ 4.65
10	$ 2.921
100	$ 2.211
500	$ 2.035
1000	$ 1.782
2000	$ 1.771

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