Product Information

STH270N4F3-6

STH270N4F3-6 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 40V 1.40 mOhm STripFET III 180A

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8337 ea
Line Total: USD 0.83

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

STH270N4F3-6
STMicroelectronics

1 : USD 0.8337
10 : USD 0.8003
25 : USD 0.8002
100 : USD 0.8
250 : USD 0.784

0 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

STH270N4F3-6
STMicroelectronics

1 : USD 6.3447
10 : USD 5.5201
25 : USD 5.2088
100 : USD 4.3391
500 : USD 3.6934
1000 : USD 3.2209

0 - Warehouse 3


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

STH270N4F3-6
STMicroelectronics

1 : USD 7.9224
10 : USD 2.8894
25 : USD 2.7547
100 : USD 2.4337
500 : USD 2.0919
1000 : USD 1.8744

0 - Warehouse 4


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 4
Multiples : 4

Stock Image

STH270N4F3-6
STMicroelectronics

4 : USD 0.8334
10 : USD 0.784

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Qualification
Tradename
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STH270N4F3-6 Automotive-grade N-channel 40 V, 1.4 m typ., 180 A 2 STripFET F3 Power MOSFET in H PAK-6 package Datasheet production data Features % Order codes V R max I DS DS(on) D STH270N4F3-6 40 V 1.7 m 180 A Designed for automotive applications and AEC-Q101 qualified Conduction losses reduced 2 H PAK-6 Low profile, very low parasitic inductance, high current package + . 3 Applications Switching applications Figure 1. Internal schematic diagram Description % 7 This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. * 6 *,3 )65 Table 1. Device summary Order code Marking Package Packaging 2 STH270N4F3-6 270N4F3 H PAK-6 Tape and reel May 2015 DocID027909 Rev 1 1/15 This is information on a product in full production. www.st.com 15 7 Contents STH270N4F3-6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package information . 9 2 4.1 H PAK-6 package information 9 5 Packing information 12 6 Revision history . 14 2/15 DocID027909 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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