STH6N95K5-2

STH6N95K5-2 N-channel 950 V, 1 typ., 6 A MDmesh K5 Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STH6N95K5-2 950 V 1.25 6 A 110 W Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) Ultra low gate charge 100% avalanche tested Zener-protected Applications Switching applications Figure 1: Internal schematic diagram D(TAB) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary G(1) vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(2, 3) AM15557a.v3 Table 1: Device summary Order code Marking Package Packaging STH6N95K5-2 6N95K5 HPAK-2 Tape and reel March 2015 DocID027383 Rev 3 1/17 www.st.com This is information on a product in full production. Contents STH6N95K5-2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 Package mechanical data ............................................................... 11 5 Packing information ...................................................................... 14 6 Revision history ............................................................................ 16 2/17 DocID027383 Rev 3