Product Information

STH270N4F3-2

STH270N4F3-2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET N-Ch 40 V 1.4 mOhm 180 A STripFET III

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.5271 ea
Line Total: USD 2.53

903 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
903 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

STH270N4F3-2
STMicroelectronics

1 : USD 2.5271

903 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3
Multiples : 1

Stock Image

STH270N4F3-2
STMicroelectronics

3 : USD 2.5271

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STH270N4F3-2 Automotive-grade N-channel 40 V, 1.4 m typ., 180 A STripFET F3 Power MOSFET in a HPAK-2 package Datasheet - production data Features Order code V R max. I DS DS(on) D STH270N4F3-2 40 V 1.7 m 190 A Designed for automotive applications and AEC-Q101 qualified Conduction losses reduced Low profile, very low parasitic inductance, high current package Applications Switching applications Figure 1: Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. Table 1: Device summary Order code Marking Package Packing 2 STH270N4F3-2 270N4F3 H PAK-2 Tape and reel October 2015 DocID16957 Rev 4 1/17 www.st.com This is information on a product in full production. Contents STH270N4F3-2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 H2PAK-2 package information ........................................................ 11 5 Packaging information .................................................................. 14 6 Revision history ............................................................................ 16 2/17 DocID16957 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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