STL12N65M5 STMicroelectronics

STL12N65M5 N-channel 650 V, 0.475 typ., 8.5 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV package Datasheet production data Features Order code V R max I DSS DS(on) D STL12N65M5 710 V 0.530 8.5 A Outstanding R *area DS(on) 1 Extremely large avalanche performance 2 3 Gate charge minimized 4 TM Very low intrinsic capacitance PowerFLAT 5x6 HV 100% avalanche tested Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel MDmesh V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics well-known * PowerMESH horizontal layout structure. The resulting product has extremely low on- resistance, which is unmatched among silicon- based Power MOSFETs, making it especially 6 suitable for applications which require superior power density and outstanding efficiency. 0 Y Table 1. Device summary Order code Marking Package Packaging STL12N65M5 12N65M5 PowerFLAT HV Tape and reel July 2013 DocID17450 Rev 4 1/17 This is information on a product in full production. www.st.com 17Contents STL12N65M5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 14 6 Revision history . 16 2/17 DocID17450 Rev 4