STL23NS3LLH7 STMicroelectronics

STL23NS3LLH7 N-channel 30 V, 0.0027 typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3 Datasheet - production data Features Order code V R max I DS DS(on) D STL23NS3LLH7 30 V 0.0037 23 A Very low on-resistance Very low Q g High avalanche ruggedness Embedded Schottky diode Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes the D(5, 6, 7, 8) STripFET H7 technology with a trench gate structure combined with extremely low on- resistance. The device also offers ultra-low capacitances for higher switching frequency operations. G(4) S(1, 2, 3) Table 1: Device summary Order code Marking Package Packing TM STL23NS3LLH7 23NS3 PowerFLAT 3.3 x 3.3 Tape and reel May 2015 DocID025074 Rev 3 1/14 www.st.com This is information on a product in full production. Contents STL23NS3LLH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFlat 3.3 x 3.3 package information ........................................ 10 5 Revision history ............................................................................ 13 2/14 DocID025074 Rev 3