Product Information

STL23NS3LLH7

STL23NS3LLH7 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 30 V, 0.0027 Ohm typ., 23 A STripFET(TM) VII DeepGATE(TM) Power MOSFET plus monolithic Schottky in a PowerFLAT(TM) 3.3 x 3.3
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 2.0064 ea
Line Total: USD 40.13

47 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 20  Multiples: 1
Pack Size: 1

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Availability Price Quantity
47 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 20
Multiples : 1

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STL23NS3LLH7
STMicroelectronics

20 : USD 2.0962

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Additional Infomation About Product

STL23NS3LLH7 N-channel 30 V, 0.0027 typ., 23 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 3.3 x 3.3 Datasheet - production data Features Order code V R max I DS DS(on) D STL23NS3LLH7 30 V 0.0037 23 A Very low on-resistance Very low Q g High avalanche ruggedness Embedded Schottky diode Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes the D(5, 6, 7, 8) STripFET H7 technology with a trench gate structure combined with extremely low on- resistance. The device also offers ultra-low capacitances for higher switching frequency operations. G(4) S(1, 2, 3) Table 1: Device summary Order code Marking Package Packing TM STL23NS3LLH7 23NS3 PowerFLAT 3.3 x 3.3 Tape and reel May 2015 DocID025074 Rev 3 1/14 www.st.com This is information on a product in full production. Contents STL23NS3LLH7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 PowerFlat 3.3 x 3.3 package information ........................................ 10 5 Revision history ............................................................................ 13 2/14 DocID025074 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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