STL73D-AP

STL73D High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated antiparallel collector-emitter diode Application Electronic ballast for fluorescent lighting TO-92 Description The device is manufactured using high voltage Figure 1. Internal schematic diagram multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STL series is designed for use in compact fluorescent lamps. Table 1. Device summary (1) Order codes Marking Package Packaging L73DL STL73D TO-92 Bag L73DH L73DL STL73D-AP TO-92 Ammopack L73DH 1. The product is classified in DC current gain group L and group H, see Table 5: hFE classification. STMicroelectronics reserves the right to ship from any group according to production availability. November 2009 Doc ID 15147 Rev 2 1/9 www.st.com 9Electrical ratings STL73D 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B Emitter-base voltage V V V EBO (BR)EBO (I = 0, I = 0.5 A, t < 10 s) C B P I Collector current 1.5 A C I Collector peak current (t < 5 ms) 3 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1.5 A BM P P Total dissipation at T = 25 C 1.5 W TOT c T Storage temperature -65 to 150 C STG T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 83 C/W thJC 2/9 Doc ID 15147 Rev 2