STP11NM60 STMicroelectronics

STB11NM60T4, STP11NM60 Datasheet N-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in DPAK and TO-220 packages Features V DSS TAB R max. I TAB Order codes Package DS(on) D ( T ) Jmax STB11NM60T4 DPAK 3 650 V 0.45 11 A 1 3 2 STP11NM60 TO-220 D PAK TO-220 2 1 100% avalanche tested Low input capacitance and gate charge Low gate input resistance D(2, TAB) Applications Switching applications G(1) Description These devices are N-channel Power MOSFETs developed using the second S(3) generation of MDmesh technology. These revolutionary Power MOSFETs AM01475v1 noZen associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STB11NM60T4 STP11NM60 Product summary Order code STB11NM60T4 Marking B11NM60 Package DPAK Packing Tape and reel Order code STP11NM60 Marking P11NM60 Package TO-220 Packing Tube DS3653 - Rev 7 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office.STB11NM60T4, STP11NM60 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 600 V DS V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 11 D C A I Drain current (continuous) at T = 100 C 7 D C (1) I Drain current (pulsed) 44 A DM P Total dissipation at T = 25 C 160 W TOT C (2) dv/dt Peak diode recovery voltage slope 15 V/ns T Storage temperature range stg -65 to 150 C T Operating junction temperature range j 1. Pulse width limited by safe operating area. 2. I 11 A, di/dt 400 A/s, V V , T T . SD DD (BR)DSS j JMAX Table 2. Thermal data Value Symbol Parameter Unit 2 TO-220 D PAK R Thermal resistance junction-case 0.78 thj-case R Thermal resistance junction-ambient 62.5 thj-amb C/W (1) R Thermal resistance junction-pcb 35 thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or non-repetitive (pulse width limited by T ) 5.5 A AR jmax E Single pulse avalanche energy (starting T = 25 C, I = I , V = 50 V) 350 mJ AS j D AR DD DS3653 - Rev 7 page 2/21