STP15810 STMicroelectronics

STP15810 N-channel 100 V, 0.0036 typ., 110 A, STripFET F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code V R I P DS DS(on)max D TOT TAB STP15810 100 V 0.0042 110 A 250 W 100% avalanche tested Ultra low on-resistance 3 2 1 TO-220 Applications Switching applications Description Figure 1. Internal schematic diagram This N-channel Power MOSFETs utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- % 7 state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. * 6 0 Y Table 1. Device summary Order code Marking Package Packaging STP15810 15810 TO-220 Tube August 2014 DocID024972 Rev 4 1/13 This is information on a product in full production. www.st.comContents STP15810 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 DocID024972 Rev 4