STP185N55F3 STMicroelectronics

STB185N55F3 STP185N55F3 2 N-channel 55V - 3.2m - 120A - D PAK/TO-220 STripFET Power MOSFET Features Type V R I Pw DSS DS(on) D (1) STB185N55F3 55V 3.5m 120A 330W (1) STP185N55F3 55V 3.8m 120A 330W 1. Value limited by wire bonding 3 3 Ultra low on-resistance 1 2 1 100% avalanche tested 2 TO-220 D PAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique single feature size strip-based process with less critical alignment Figure 1. Internal schematic diagram steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Applications Switching applications Automotive Table 1. Device summary Order codes Marking Package Packaging 2 STB185N55F3 185N55F3 D PAK Tape & reel STP185N55F3 185N55F3 TO-220 Tube June 2007 Rev 2 1/14 www.st.com 14Contents STB185N55F3 - STP185N55F3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuit 8 4 Package mechanical data . 9 5 Packaging mechanical data 12 6 Revision history . 13 2/14