STP35N60M2-EP STMicroelectronics

STP35N60M2-EP N-channel 600 V, 0.110 typ., 26 A MDmesh M2 EP Power MOSFET in a TO-220 package Datasheet - production data Features V R DS DS(on) Order code ID TAB T max. Jmax STP35N60M2-EP 650 V 0.130 26 A Extremely low gate charge 3 2 Excellent output capacitance (C ) profile OSS 1 Very low turn-off switching losses TO-220 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram Switching applications Tailored for very high-frequency converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STP35N60M2-EP 35N60M2EP TO-220 Tube May 2017 DocID030578 Rev 1 1/14 www.st.com This is information on a product in full production. Contents STP35N60M2-EP Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 5 Revision history ............................................................................ 13 2/14 DocID030578 Rev 1