STP35N65DM2 STMicroelectronics

STP35N65DM2 N-channel 650 V, 0.093 typ., 32 A MDmesh DM2 Power MOSFET in a TO-220 package Datasheet - production data Features R DS(on) Order code VDS ID PTOT TAB max. 650 32 250 STP35N65DM2 0.110 V A W 3 2 Fast-recovery body diode 1 Extremely low gate charge and input TO-220 capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Figure 1: Internal schematic diagram Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Q ) rr and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STP35N65DM2 35N65DM2 TO-220 Tube December 2017 DocID030872 Rev 2 1/13 www.st.com This is information on a product in full production. Contents STP35N65DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-220 type A package information ................................................ 10 5 Revision history ............................................................................ 12 2/13 DocID030872 Rev 2