Product Information

STPS20150CG-TR

STPS20150CG-TR electronic component of STMicroelectronics

Datasheet
STMicroelectronics Schottky Diodes & Rectifiers 2X10 Amp 150 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.168 ea
Line Total: USD 1168

11640 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
10670 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

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STPS20150CG-TR
STMicroelectronics

1000 : USD 0.4951
2000 : USD 0.4852

     
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RoHS - XON
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Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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Cnhts
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STPS20150C Datasheet High voltage power Schottky rectifier Features A1 K A2 High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current K Avalanche capability specified Insulated package: TO-220FPAB A2 Insulating voltage = 2000 V sine RMS A2 K K A1 A1 ECOPACK 2 compliant component for DPAK on demand TO-220AB TO-220FPAB Description K Dual center tap Schottky rectifier designed for high frequency switch mode power supplies. A2 K A1 2 I PAK K K A2 A2 A1 A1 2 D PAK Product status link STPS20150C Product summary I 2 x 10 A F(AV) V 150 V RRM T (max) 175 C j V (typ) 0.69 V F DS2252 - Rev 12 - April 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS20150C Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 150 V RRM I Forward rms current 30 A F(RMS) 2 2 T = 155 C Per diode TO-220AB, D PAK, I PAK C 10 Average forward current = 0.5, square I TO-220FPAB T = 135 C Per diode A F(AV) C wave All types Per device 20 I Surge non repetitive forward current tp = 10 ms sinusoidal 180 A FSM P Repetitive peak avalanche power tp = 10 s, T = 125 C 480 W ARM j T Storage temperature range -65 to + 175 C stg (1) T Maximum operating junction temperature + 175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal parameter Symbol Parameter Value Unit 2 2 2.2 TO-220AB, D PAK, I PAK Per diode TO-220FPAB 4.5 R Junction to case C/W th(j-c) 2 2 TO-220AB, D PAK, I PAK 1.3 Total TO-220FPAB 3.5 2 2 0.3 TO-220AB, D PAK, I PAK R Coupling - C/W th(c) TO-220FPAB 2.5 When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 5.0 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 5.0 mA j - 0.92 I = 10 A F - 0.69 0.75 (2) V Forward voltage drop T = 25 C V F j - 1.0 I = 20A F - 0.79 0.86 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses use the following equation: P = 0.64 x I + 0.011 I F(AV) F (RMS) DS2252 - Rev 12 page 2/17

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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