X-On Electronics has gained recognition as a prominent supplier of STPS200170TV1 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. STPS200170TV1 Schottky Diodes & Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

STPS200170TV1 STMicroelectronics

STPS200170TV1 electronic component of STMicroelectronics
STPS200170TV1 STMicroelectronics
STPS200170TV1 Schottky Diodes & Rectifiers
STPS200170TV1  Semiconductors

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Part No. STPS200170TV1
Manufacturer: STMicroelectronics
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers STPS200170TV1
Datasheet: STPS200170TV1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 28.63 ea
Line Total: USD 28.63 
Availability - 7
Ship by Wed. 07 May to Fri. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Wed. 07 May to Fri. 09 May
MOQ : 1
Multiples : 1
1 : USD 28.63
2 : USD 27.076
3 : USD 27.062

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STPS200170TV1 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STPS200170TV1 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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STPS200170TV1 High voltage power Schottky rectifier Datasheet - production data Description A1 K1 This high voltage Schottky rectifier is suited for A2 K2 high frequency switch mode power supplies. Packaged in ISOTOP, this device is intended for A2 use in the secondary rectification of applications. K2 Table 1: Device summary A1 Symbol Value K1 IF(AV) 2 x 100 A ISOTOP VRRM 170 V T (max.) 150 C j VF (max.) 0.63 V Features Negligible switching losses Avalanche rated Low leakage current Good trade-off between leakage current and forward voltage drop Insulated package ISOTOP: Insulated voltage: 2500 V RMS Capacitance: 45 pF February 2018 DocID11857 Rev 3 1/8 www.st.com This is information on a product in full production. Characteristics STPS200170TV1 1 Characteristics Table 2: Absolute ratings (limiting values, per diode at Tamb = 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V I Forward rms current 200 A F(RMS) T = 105 C Per diode IF(AV) Average forward current, = 0.5 C 100 A I Surge non repetitive forward current t = 10 ms sinusoidal 700 A FSM p P Repetitive peak avalanche power tp = 10 s Tj = 125 C 7400 W ARM Tstg Storage temperature range -55 to +150 C (1) Tj Maximum operating junction temperature 150 C Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Symbol Parameter Maximum values Unit Per diode 0.52 Junction to case Rth(j-c) Total 0.31 C/W Coupling thermal resistance Rth(c) 0.1 When the diodes 1 and 2 are used simultaneously: T (diode1) = P x R + P x R j (diode1) th(j-c) (per diode) (diode2) th(c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 200 A j (1) I Reverse leakage current V = V R R RRM Tj = 125 C - 30 100 mA T = 25 C - 0.85 j I = 100 A F Tj = 150 C - 0.63 0.68 (2) VF Forward voltage drop V T = 25 C - 0.975 j I = 200 A F Tj = 150 C - 0.78 0.86 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the maximum conduction losses, use the following equation: 2 P = 0.5 x IF(AV) + 0.0018 x IF (RMS) 2/8 DocID11857 Rev 3

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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