Ships to you between Tue. 21 May to Mon. 27 May
STPS2030CT STMicroelectronics
Ships to you betweenTue. 28 May to Fri. 31 May
Ships to you between Mon. 27 May to Wed. 29 May
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STPS2030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 I 2x10A F(AV) K V 30 V RRM A2 Tj (max) 150C K V (max) 0.40 V F FEATURES AND BENEFITS A2 A2 K n VERY SMALL CONDUCTION LOSSES A1 A1 n NEGLIGIBLE SWITCHING LOSSES TO-220AB 2 n EXTREMELY FAST SWITCHING D PAK STPS2030CT n LOW FORWARD VOLTAGE DROP FOR STPS2030CG HIGHER EFFICIENCY n LOW THERMAL RESISTANCE n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual Schottky rectifier suited for switch Mode A2 K Power Supply and high frequency DC to DC A1 converters. 2 2 2 I PAK Packaged in TO-220AB, D PAK and I PAK, this STPS2030CR device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 30 V RRM Repetitive peak reverse voltage I 30 A F(RMS) RMS forward current I 10 A F(AV) Average forward Tc = 140C Per diode 20 current = 0.5 Per device I 180 A FSM Surge non repetitive forward current tp = 10 ms Sinusoidal I 1A RRM Peak repetitive reverse current tp=2 s square F=1kHz I 2A RSM Non repetitive peak reverse current tp = 100 s square P 3000 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage (rated V , Tj = 25C) R dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3A 1/6STPS2030CT/CG/CR THERMAL RESISTANCES Symbol Parameter Value Unit 2 2 R Per diode 2.2 C/W th(j-c) Junction to case TO-220AB - D PAK-I PAK Total 1.3 R Coupling 0.3 C/W th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 0.15 1.0 mA R Reverse leakage Tj = 25C V =V R RRM 80 160 current Tj = 125C V * 0.44 0.50 V F Forward voltage drop Tj = 25CI =10A F 0.34 0.40 Tj = 125C I =10A F 0.50 0.58 Tj=25CI =20A F 0.44 0.52 Tj = 125C I =20A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P=0.28xI + 0.012 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature( = 0.5). P (W) F(AV) I (A) F(AV) 6 11 = 0.2 = 0.1 10 = 0.5 R=th(j-a)Rth(j-c) 5 = 0.05 9 8 4 7 = 1 6 3 R =50C/W th(j-a) 5 4 2 3 T T 1 2 1 I (A) F(AV) T (C) =tp/T tp amb tp =tp/T 0 0 0123 456789 10 11 12 13 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(t) ARM p P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j t (s) p 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/6
