STPS2030CT STMicroelectronics

STPS2030CT/CG/CR LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS A1 I 2x10A F(AV) K V 30 V RRM A2 Tj (max) 150C K V (max) 0.40 V F FEATURES AND BENEFITS A2 A2 K n VERY SMALL CONDUCTION LOSSES A1 A1 n NEGLIGIBLE SWITCHING LOSSES TO-220AB 2 n EXTREMELY FAST SWITCHING D PAK STPS2030CT n LOW FORWARD VOLTAGE DROP FOR STPS2030CG HIGHER EFFICIENCY n LOW THERMAL RESISTANCE n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual Schottky rectifier suited for switch Mode A2 K Power Supply and high frequency DC to DC A1 converters. 2 2 2 I PAK Packaged in TO-220AB, D PAK and I PAK, this STPS2030CR device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 30 V RRM Repetitive peak reverse voltage I 30 A F(RMS) RMS forward current I 10 A F(AV) Average forward Tc = 140C Per diode 20 current = 0.5 Per device I 180 A FSM Surge non repetitive forward current tp = 10 ms Sinusoidal I 1A RRM Peak repetitive reverse current tp=2 s square F=1kHz I 2A RSM Non repetitive peak reverse current tp = 100 s square P 3000 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage (rated V , Tj = 25C) R dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3A 1/6STPS2030CT/CG/CR THERMAL RESISTANCES Symbol Parameter Value Unit 2 2 R Per diode 2.2 C/W th(j-c) Junction to case TO-220AB - D PAK-I PAK Total 1.3 R Coupling 0.3 C/W th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 0.15 1.0 mA R Reverse leakage Tj = 25C V =V R RRM 80 160 current Tj = 125C V * 0.44 0.50 V F Forward voltage drop Tj = 25CI =10A F 0.34 0.40 Tj = 125C I =10A F 0.50 0.58 Tj=25CI =20A F 0.44 0.52 Tj = 125C I =20A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P=0.28xI + 0.012 I F(AV) F (RMS) Fig. 1: Conduction losses versus average current. Fig. 2: Average forward current versus ambient temperature( = 0.5). P (W) F(AV) I (A) F(AV) 6 11 = 0.2 = 0.1 10 = 0.5 R=th(j-a)Rth(j-c) 5 = 0.05 9 8 4 7 = 1 6 3 R =50C/W th(j-a) 5 4 2 3 T T 1 2 1 I (A) F(AV) T (C) =tp/T tp amb tp =tp/T 0 0 0123 456789 10 11 12 13 0 25 50 75 100 125 150 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(t) ARM p P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j t (s) p 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/6