STPS20100CT STMicroelectronics

STPS20100CT HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 I 2 x 10A F(AV) K V 100V RRM A2 V (max) 0.7V F Tj (max) 175C FEATURES n Negligible switching losses n Low forward voltage drop n Low capacitance A2 K n High reverse avalanche surge capability A1 DESCRIPTION TO-220AB High voltage dual Schottky rectifier suited for STP20100CT switchmode power supplies and other power converters. Packaged in TO-220AB, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses and low noise are required. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Repetitive peak reverse voltage 100 V RRM I RMS forward current Per diode 30 A F(RMS) I Average forward current = 0.5 Tc=110C Per diode 10 A F(AV) Per device 20 A V = 60V R I Surge non repetitive forward current tp=10ms Per diode 200 A FSM sinusoidal I Per diode 1 A Repetitive peak reverse current tp=2s RRM F=1KHz I Non repetitive peak reverse current tp=100s Per diode 1 A RSM Tstg Storage temperature range -65to+175 C Tj Maximum junction temperature (*) 175 C dV/dt Critical rate of rise of reverse voltage 1000 V/s dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a August 2002 - Ed:2C 1/4STPS20100CT THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-c) Junction to case 1.6 Per diode C/W 0.9 Total Rth (c) Coupling 0.15 C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit I * Reverse leakage current V =V Tj = 25C 150 A R R RRM Tj = 125C 100 mA V ** Forward voltage drop IF = 20A Tj = 125C 0.85 V F IF = 10A Tj = 125C 0.60 0.70 IF = 20A Tj = 25C 0.95 Pulse test : * tp = 5 ms, duty cycle<2% ** tp = 380 s, duty cycle<2% To evaluate the conduction losses use the following equation : 2 P=0.55xI + 0.015 x I F(AV) F (RMS) Fig. 1 : Average forward power dissipation versus Fig. 2 : Average current versus ambient temperature. (duty cycle : 0.5) (Per diode) average forward current. (Per diode) I P F(av)(A) F(av)(W) 12 12 Rth(j-a)=Rth(j-c) 11 =0.2 =0.5 =1 =0.1 10 10 9 =0.05 8 8 7 o Rth(j-a)=15 C/W 6 6 =0.5 5 T T 4 4 3 2 2 1 I =tp/T =tp/T tp F(av)(A) tp Tamb(oC) 0 0 012345 6789 101112131415 0 25 50 75 100 125 2/4