STPS20SM80C Power Schottky rectifier Datasheet - production data Description A1 K A2 This dual diode Schottky rectifier is suited for high frequency switch mode power supply. Packaged in TO-220AB and TO-220FPAB, this K device is particularly suited for use in notebook, game station, LCD TV and desktop adapters, providing these applications with a good A2 efficiency at both low and high load. K A2 K A1 Table 1: Device summary A1 Symbol Value TO-220AB TO-220FPAB I 2 x 10 A F(AV) VRRM 80 V T(max.) 175 C j Features VF(typ.) 515 mV High junction temperature capability Optimized trade-off between leakage current and forward voltage drop Figure 1: Electrical characteristics Low leakage current Avalanche capability specified Insulated package TO-220FPAB Insulated voltage: 2000 V sine RMS VARM and IARM must respect the reverse safe operating area defined in Figure 10. V and AR IAR are pulse measurements (tp < 1 s). VR, I , V and V , are static characteristics. R RRM F May 2017 DocID018720 Rev 2 1/10 www.st.com This is information on a product in full production. Characteristics STPS20SM80C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 80 V I Forward rms current 30 A F(RMS) T = 155 C Per diode 10 C TO-220AB Average forward T = 150 C Per device 20 C IF(AV) current = 0.5, A TC = 130 C Per diode 10 square wave TO-220FPAB TC = 100 C Per device 20 I Surge non repetitive forward current t = 10 ms sinusoidal 220 A FSM p (1) P ARM Repetitive peak avalanche power tp = 10 s, Tj = 125 C 385 W t < 1 s, p Maximum repetitive peak avalanche (2) VARM Tj < 150 C, 100 V voltage I < 16.2 A AR tp < 1 s, Maximum single pulse peak (2) V ASM Tj < 150 C, 100 V avalanche voltage I < 16.2 A AR T Storage temperature range -65 to +175 C stg (3) Maximum operating junction temperature Tj 175 C Notes: (1) For pulse time duration deratings, please refer to figure 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. (2) See Figure 10 (3) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameters Symbol Parameter Max. value Unit Per diode 2.30 TO-220AB Total 1.55 Junction to case Rth(j-c) C/W Per diode 5.80 TO-220FPAB Total 4.65 TO-220AB 0.80 R Coupling C/W th(c) TO-220FPAB 3.50 When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) 2/10 DocID018720 Rev 2