Product Information

STPS2545CTY

Name: STPS2545CTY
Brand: STMicroelectronics
SKU: STPS2545CTY_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STPS2545CTY electronic component of STMicroelectronics

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Datasheet

STMicroelectronics Schottky Diodes & Rectifiers Auto pwr Schottky 2X12.5A 45V 0.57VF

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 5.7164 ea
Line Total: USD 5.72

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 30 May to Mon. 03 Jun MOQ : 1 Multiples : 1 STPS2545CTY STMicroelectronics	1 : USD 5.7164 10 : USD 2.0622 100 : USD 1.6561 500 : USD 1.3677 1000 : USD 1.1219

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Additional Infomation About Product

STPS2545CT-Y Automotive power Schottky rectifier Datasheet production data Features A1 Very small conduction losses K A2 Negligible switching losses Extremely fast switching Low thermal resistance Avalanche capability specified AEC-Q101 qualified A2 K A1 Description TO-220AB Dual center tab Schottky rectifier suited for switch mode power supplies and high frequency DC to Table 1. Device summary DC converters. Symbol Value This device is especially intended for use in low voltage, high frequency inverters, free-wheeling I 2 x 12.5 A F(AV) and polarity protection in automotive applications. V 45 V RRM T 175 C j (max) V 0.57 V F(max) June 2012 Doc ID 18183 Rev 2 1/7 This is information on a product in full production. www.st.com 7Characteristics STPS2545CT-Y 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 30 A F(RMS) T = 160 C I Average forward current = 0.5 Per diode 12.5 A c F(AV) I Surge non repetitive forward current t = 10 ms sinusoidal 200 A FSM p P Repetitive peak avalanche power t = 1 s, T = 25 C 4800 W p j ARM T Storage temperature range -65 to + 175 C stg (1) T Operating junction temperature range -40 to + 175 C j dV/dt Critical rate of rise reverse voltage 10000 V/s dPtot 1 1. < condition to avoid thermal runaway for a diode on its own heatsink. dTj Rth(j-a) Table 3. Thermal resistances parameters Symbol Parameter Value Unit R Junction to case Per diode 1.6 C/W th (j-c) R Coupling 0.6 C/W th (c) When the diodes 1 and 2 are used simultaneously: T (diode 1) = P(diode 1) x R (per diode) + P(diode 2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C 125 A j Reverse leakage (1) I V = V R R RRM current T = 125 C 9 25 mA j T = 125 C I = 12.5 A 0.50 0.57 j F (1) V Forward voltage drop T = 25 C I = 25 A 0.84 V F j F T = 125 C I = 25 A 0.65 0.72 j F 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.012 x I F(AV) F (RMS) 2/7 Doc ID 18183 Rev 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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