Product Information

STPS2L60AY

STPS2L60AY electronic component of STMicroelectronics

Datasheet
Schottky Diodes & Rectifiers Auto pwr Schottky 2A IF 60V VRRM 0.55V

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5000: USD 0.1356 ea
Line Total: USD 678

9700 - Global Stock
Ships to you between
Tue. 14 May to Mon. 20 May
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
9700 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 5000
Multiples : 5000

Stock Image

STPS2L60AY
STMicroelectronics

5000 : USD 0.1356
10000 : USD 0.1329
25000 : USD 0.1329
50000 : USD 0.1329

9700 - WHS 2


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 5000
Multiples : 5000

Stock Image

STPS2L60AY
STMicroelectronics

5000 : USD 0.1356
10000 : USD 0.1329

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Series
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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STPS2L60-Y Automotive power Schottky rectifier Features AEC-Q101 qualified A Negligible switching losses K Low forward voltage drop Surface mount miniature package SMA STPS2L60AY Avalanche capability specified ECOPACK 2 compliant component Description Table 1. Device summary This power Schottky rectifier is suited to switched Symbol Value mode power supplies and high frequency DC to I 2 A F(AV) DC converters for automative applications. V 60 V RRM Packaged in SMA, this device is especially T (max) 150 C intended for use in low voltage, high frequency j inverters and small battery chargers. V (max) 0.55 V F November 2011 Doc ID 018927 Rev 1 1/7 www.st.com 7Characteristics STPS2L60-Y 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 60 V RRM I Forward rms voltage 10 A F(RMS) I Average forward current T = 115 C = 0.5 2 A F(AV) L I Surge non repetitive forward current t =10 ms sinusoidal 75 A FSM p P Repetitive peak avalanche power t = 1 s T = 25 C 1600 W ARM p j T Storage temperature range -65 to +150 C stg (1) T Operating junction temperature range -40 to +150 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Test conditions Value Unit R Junction-lead 25 C/W th(j-l) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 100 A j Reverse leakage (1) I V = V R R RRM current T = 100 C 2 10 mA j T = 25 C 0.60 j I = 2 A F T = 125 C 0.51 0.55 j (1) V Forward voltage drop V F T = 25 C 0.77 j I = 4 A F T = 125 C 0.62 0.67 j 1. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.43 x I + 0.06 I F(AV) F (RMS) 2/7 Doc ID 018927 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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