STPS30170CG-TR STMicroelectronics

STPS30170C High voltage power Schottky rectifier Datasheet - production data Features A1 K High junction temperature capability A2 Good trade off between leakage current and forward voltage drop Low leakage current Avalanche capability specified ECOPACK 2 compliant component for DPAK on demand A2 Description K TO-247 Dual center tap Schottky rectifier designed for A1 high frequency switch mode power supply. Table 1: Device summary K K Symbol Value IF(AV) 2 x 15 A V 170 V RRM A2 A2 Tj (max) 175 C A1 A1 VF (typ) 0.69 V 2 D PAK May 2017 DocID11640 Rev 2 1/13 www.st.com This is information on a product in full production. Characteristics STPS30170C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 170 V I Forward rms current 30 A F(RMS) Per diode 15 Average forward current IF(AV) TC = 150 C A = 0.5, square wave Per device 30 Surge non repetitive IFSM tp = 10 ms sinusoidal 220 A forward current Repetitive peak P t = 10 s, T = 125 C 750 W ARM p j avalanche power T Storage temperature range -65 to +175 C stg (1) Tj Maximum operating junction temperature +175 C Notes: (1) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameter Symbol Parameter Max. value Unit 2 D PAK 1.6 Per diode TO-247 1.5 Junction to case Rth(j-c) C/W 2 D PAK 0.95 Total TO-247 0.9 2 D PAK R Coupling Coupling 0.3 C/W th(c) TO-247 When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) 2/13 DocID11640 Rev 2