STPSC8065-Y Automotive 650 V power Schottky silicon carbide diode Datasheet - production data Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during Features transient phases. AEC-Q101 qualified Table 1: Device summary No or negligible reverse recovery Symbol Value Switching behavior independent of temperature IF(AV) 8 A Dedicated to PFC applications VRRM 650 V High forward surge capability Tj (max.) 175 C PPAP capable V (typ.) 1.30 V F Operating Tj from -40 C to 175 C ECOPACK2 compliant component July 2017 DocID030729 Rev 2 1/9 www.st.com This is information on a product in full production. Characteristics STPSC8065-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit Repetitive peak reverse V T from -40 C to 175 C 650 V RRM j voltage I Forward rms current 22 A F(RMS) (1) I Average forward current TC = 150 C , DC current 8 A F(AV) Repetitive peak forward I Tc = 150 C, Tj = 175 C, = 0.1 36 A FRM current tp = 10 ms sinusoidal, Tc = 25 C 46 Surge non repetitive forward I tp = 10 ms sinusoidal, Tc = 125 C 38 A FSM current tp = 10 s square, Tc = 25 C 200 T Storage temperature range -65 to +175 C stg (2) Tj Operating junction temperature -40 to +175 C Notes: (1) Value based on Rth(j-c) max. (2) (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 3: Thermal parameters Value Symbol Parameter Unit Typ. Max. Rth(j-c) Junction to case 1.1 1.65 C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 2 105 (1) I Reverse leakage current V = V A R R RRM T = 150 C - 20 750 j Tj = 25 C - 1.30 1.45 (2) V Forward voltage drop T = 150 C I = 8 A - 1.45 1.65 V F j F Tj = 175 C - 1.50 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: t = 500 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.95 x IF(AV) + 0.087 x IF (RMS) 2/9 DocID030729 Rev 2