STS3P6F6 STMicroelectronics

STS3P6F6 P-channel 60 V, 0.13 typ., 3 A STripFET F6 Power MOSFET in a SO-8 package Datasheet - production data Features Order code V R I DSS DS(on)max D 5 6 7 STN3P6F6 60 V 0.16 10 V 3 A 8 R * Qg industry benchmark DS(on) 4 Extremely low on-resistance R DS(on) 3 2 1 High avalanche ruggedness SO-8 Low gate drive power losses Applications Switching applications Figure 1. Internal schematic diagram Description This device is a P-channel Power MOSFET D (5,6,7,8) th developed using the 6 generation of STripFET technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) G (4) S (1,2,3) Table 1. Device summary Order code Marking Package Packaging STS3P6F6 3K60 SO-8 Tape and reel Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. July 2014 DocID024437 Rev 2 1/16 This is information on a product in full production. www.st.com 16Contents STS3P6F6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 8 4 Package mechanical data . 9 5 Packaging mechanical data 13 6 Revision history . 15 2/16 DocID024437 Rev 2