STS6P3LLH6 Datasheet P-channel 30 V, 24 m typ., 6 A, STripFET H6 Power MOSFET in an SO-8 package 5 Features 8 V R max. I Order code DS DS(on) D STS6P3LLH6 30 V 30 m 6 A 4 1 Very low on-resistance Very low gate charge SO-8 High avalanche ruggedness Low gate drive power loss D(5, 6, 7, 8) Applications Switching applications G(4) Description This device is a P-channel Power MOSFET developed using the STripFET H6 S(1, 2, 3) technology with a new trench gate structure. The resulting Power MOSFET exhibits AM01475v4 very low R in all packages. DS(on) Product status link STS6P3LLH6 Product summary Order code STS6P3LLH6 Marking 6K3L Package SO-8 Packing Tape and reel DS9470 - Rev 3 - February 2021 www.st.com For further information contact your local STMicroelectronics sales office.STS6P3LLH6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 30 V DS V Gate-source voltage 20 V GS Drain current (continuous) at T = 25 C 6 amb I A D Drain current (continuous) at T = 100 C 4 amb (1) I Drain current (pulsed) 24 A DM P Total power dissipation at T = 25 C 2.7 W TOT amb T Storage temperature range -55 to 150 C stg T Operating junction temperature 150 C J 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit (1) R Thermal resistance, junction-to-ambient 47 C/W thJA 1. When mounted on 1 inch FR-4 board, 2 oz. Cu., t 10 s. Note: For the P-channel Power MOSFET the actual polarity of the voltages and the current must be reversed. DS9470 - Rev 3 page 2/14