STT6N3LLH6 STMicroelectronics

STT6N3LLH6 N-channel 30 V, 0.021 typ., 6 A STripFET VI DeepGATE Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code V R max I P DSS DS(on) D TOT 0.025 (V = 10 V) 4 GS STT6N3LLH6 30 V 6 A 1.6 W 5 0.036 6 3 (V = 4.5 V) GS 2 1 R * Q industry benchmark DS(on) g SOT23-6L Extremely low on-resistance R DS(on) High avalanche ruggedness Low gate drive power losses Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R in all packages. DS(on) Table 1. Device summary Order code Marking Package Packaging STT6N3LLH6 STG1 SOT23-6L Tape and reel March 2014 DocID023012 Rev 3 1/12 This is information on a product in full production. www.st.comContents STT6N3LLH6 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID023012 Rev 3