STTH602C-Y Automotive ultrafast recovery diode Datasheet - production data Description A1 K This dual center tap diode is suited for switch A2 mode power supplies and high frequency DC to DC converters. Packaged in DPAK, this device is intended for use in low voltage high frequency inverters, freewheeling and polarity protection for A2 automotive applications. K Table 1: Device summary A1 Symbol Value DPAK I 2 x 3 A F(AV) VRRM 200 V V (typ.) 0.80 V F Features Tj(max.) 175 C AEC-Q101 qualified Suited for SMPS T (typ.) 14 ns rr Low losses Low forward and reverse recovery time High surge current capability High junction temperature PPAP capable March 2017 DocID023250 Rev 2 1/9 www.st.com This is information on a product in full production. Characteristics STTH602C-Y 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V I Forward rms current 11 A F(RMS) Tc = 160 C 3 Average forward current I A F(AV) = 0.5, square wave T = 155 C 6 c IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 60 A T Storage temperature range -65 to +175 C stg Tj Operating junction temperature range -40 to +175 C Table 3: Thermal parameters Symbol Parameter Max. value Unit Per diode 5 Rth(j-c) Junction to case Per device 3 C/W Rth(c) Coupling 1 When the two diodes 1 and 2 are used simultaneously: T (diode 1) = P (diode 1) x R (Per diode) + P (diode 2) x R j th(j-c) th(c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - 3 (1) I R Reverse leakage current VR = VRRM A T = 125 C - 3 30 j Tj = 25 C - 0.98 1.1 IF = 3 A T = 150 C - 0.8 0.95 j (2) V Forward voltage drop V F Tj = 25 C - 1.1 1.25 IF = 6 A T = 150 C - 0.9 1.05 j Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.85 x I + 0.033 x I F(AV) F (RMS) 2/9 DocID023250 Rev 2